| PART |
Description |
Maker |
| EPC-440-0.9 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-1300-1.0-0 EPC-13.0-1.0-0 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-740-0.5 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-880-0.5 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-1300-0.22-3 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| EPC-1300-1.0-3 |
Photodiode-Chip
|
EPIGAP optoelectronic GmbH
|
| PD322PI |
2-DIVISION CHIP TYPE PHOTODIODE
|
SHARP[Sharp Electrionic Components]
|
| KOM0622033A |
6-CHIP SILICON PHOTODIODE ARRAY LOW DARK CURRENT
|
SIEMENS AG
Siemens Semiconductor Group
|
| S8865-256 S8865-256G |
Photodiode array combined with signal processing circuit chip
|
Hamamatsu Corporation
|
| S5106 S5107 S7509 S7510 |
Si PIN photodiode Chip carrier package for surface mount
|
Hamamatsu Corporation
|
| S8865-256G |
Photodiode array combined with signal processing circuit chip 光电二极管阵列结合信号处理集成电路芯
|
Hamamatsu Photonics K.K.
|
| S2592 |
Si photodiode Thermoelectrically cooled photodiode for low-light-level detection in UV to near IR
|
Hamamatsu Corporation
|
